How Does Thinner Gate Oxide Achieve Faster MOSFET Switching?

I think a thinner gate oxide reduces the voltage needed to turn on the gate. This means the rise time is shorter, which makes the switching faster. Lower voltage also brings other benefits like lower power usage.

You are right, Threshold voltage is inversely related to oxide capacitance, which is inversely related to oxide thickness. With a shorter distance, the charge at the gate terminal repels the holes in the substrate more effectively. This means free electrons gather faster between the source and drain, forming an inversion layer and allowing the MOSFET to conduct more quickly.

We need to look beyond the simple RC time constant. In semiconductor physics, a thinner gate oxide increases the electric field, which speeds up charge movement. This results in faster switching times