What do SDB/MDB, GR, CB, PPA, and RXN/RXP stand for in Transistor?

SDB stands for single diffusion break, MDB for mixed diffusion break, and PPA for power performance and area. Additionally, RX refers to the active region of the cell, while RXN/P refers to specific regions (N or P doped).

Layout Example with multi- finger

Transistor Layout (Image source)

SDB(Single Diffusion Break)

In transistor technology, particularly in the context of integrated circuit (IC) design, SDB refers to a specific configuration where there is a single diffusion break in the structure. This break typically separates different regions of the transistor, such as the source and drain regions.

MDB(Mixed Diffusion Break)

MDB, like SDB, is a term used in transistor technology. However, in this case, it refers to a configuration where there is a mixed or multiple diffusion breaks within the transistor structure. This configuration might be utilized for specific purposes in transistor design.

PPA(Power Performance Area)

Explanation: PPA is a key metric used in semiconductor and integrated circuit design. It represents a trade-off analysis considering power consumption, performance, and area utilization. Designers aim to optimize PPA metrics to achieve efficient and effective transistor and circuit designs.

RXN/RXP(RXN: Region of Active Cell (N-doped) RXP: Region of Active Cell (P-doped))

RXN and RXP refer to specific regions within a transistor cell. These regions are typically doped with either N-type or P-type materials, representing different conductivity types. Understanding and controlling these regions are essential for proper transistor functioning and overall circuit performance. Transistors utilize these regions to control the flow of current between the source and drain terminals, depending on the voltage applied to the gate terminal.RX also reffer as Diffusion.