In my opinion, latchup prevention should focus on reducing the gain of the parasitic BJTs. Techniques like using a buried n+ layer or adding a guard ring around wells are usefull. These methods help in decreasing the gains of the parasitic transistors and stop the feedback loop that leads to latchup.
Preventing latchup involves both design and system approaches. On the design side, reducing well and substrate resistances and using guard rings can help. On the system side, avoiding sudden transients on power or ground buses and protecting against ESD can prevent the conditions that lead to latchup. Techniques like SOI and STI technology can also eliminate latchup issues completely.
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