HBM vs. DDR: Key Differences Explained for High-Performance Computing
HBM (High-Bandwidth Memory) and DDR (Double Data Rate) are both types of DRAM, but they serve different purposes and have significant differences. Let’s break it down in simple…
Analog DesignA collection of 35 posts
The process of building thousands of transistors into a single chip to create an integrated circuit (IC) is known as very-large-scale integration, or VLSI. When complex semiconductor and communication technologies were being developed in the 1970s, VLSI got started.
Optical Proximity Correction: Applications and Challenges
Optical Proximity Correction (OPC) is an important technique we use to fix mistakes that happen during the imaging process in lithography. It involves making changes to the mask…
Electromigration in IC Design: Tips for Reducing EM
Electromigration (EM) is a phenomenon where metal ions in an interconnect get displaced due to the flow of electrons. You need to consider how this affects our circuit…
What is Parasitic Channel Formation in MOSFETs: Causes and Solutions
Parasitic Channel A parasitic channel in a MOSFET happens when unintended conductive paths form between the source and drain regions due to poor design or environmental factors. You…
What is the Difference Between Multiplier and Finger Concepts in VLSI Layout?
VLSI layout design, both Multiplier and Finger concepts are used to optimize transistor layout for better performance, area, and routing. Here’s the difference between the two: What is…
What is Body (Back Gate) Effect?
The Body (Back Gate) Effect is a phenomenon in MOS transistors where the threshold voltage (VT) of the transistor changes due to a voltage applied to the transistor’s…
What is Zero-Temperature-Coefficient (ZTC) voltage?
Zero-Temperature-Coefficient (ZTC) is the point at which the performance of a transistor becomes independent of temperature changes. Normally, when the temperature increases, we see two main effects: the…
What is the Narrow-Channel Effect?
The Narrow-Channel Effect refers to a phenomenon where the threshold voltage (VT) of a MOSFET increases as the width of the channel becomes smaller. This happens because, as…
Why do we need N-PLUS and P-PLUS in VLSI Fabrication?
When it comes to N-PLUS (NMOS Source-Drain) or NSD and P-PLUS (PMOS Source-Drain) or PSD masks, you might wonder why these are necessary in the process of fabricating…
What is STI (Shallow Trench Isolation), and why do we need it in semiconductor devices?
In semiconductor manufacturing, you might have come across the term “STI” or Shallow Trench Isolation. I want to share some thoughts on what STI is and why we…
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